bur52 comset semiconductors 1/3 h h i i g g h h c c u u r r r r e e n n t t n n p p n n s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s the bur52 is a silicon multiepitaxial planar np n transistor in modified jedec to-3 metal case, intented for use in switching and linear applications in military and industrial equipment. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 250 v v cbo collector-base voltage (i e = 0) 350 v v ebo emitter-base voltage (i c = 0) 10 v i c collector current i c 60 a i cm t p = (10 ms) 80 i b base current 16 a p t power dissipation @ t c = 25 350 w t j junction temperature 200 c t s storage temperature -55 to +200 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 0.5 c/w
bur52 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce = 250 v, (i b = 0) - - 1 ma i ebo emitter cutoff current v be = 7 v, (i c = 0) - - 0.2 a i cbo collector cutoff current t case = 25c v cb = 350 v, (i e = 0) - - 0.2 ma t case = 125c v c = 350 v, (i e = 0) - - 2 v ceo(sus) collector-emitter sustaining voltage (*) i c = 200 a 250 - - v v ebo emitter-base voltage i c = 10 ma, (i c = 0) 10 - - v v ce(sat) collector-emitter saturation voltage (*) i c = 25 a, i b = 2 a - - 1 v i c = 40 a, i b = 4 a - 0.7 1.5 v be(sat) base-emitter saturation voltage (*) i c = 25 a, i b = 2 a - - 1.8 v i c = 40 a, i b = 4 a - 1.5 2 h fe dc current gain (*) v ce = 4 v, i c = 5 a 20 - 100 - v ce = 4 v, i c = 40 a 15 - - i s/b second breakdown collector current v ce = 20 v, t = 1 s 17.5 - - a f t transition - frequency v ce = 5 v, i c = 1 a f = 1 mhz - 10 16 mhz t on turn-on time v cc = 100 v i c = 40 a ; i b1 = 4 a - 0.3 1 s t s storage time v cc = 100 v i c = 40 a i b1 = 4 a, i b2 = -4 a - 1.2 2 s f f fall time - 0.2 0.6 clamped e s/b collector current v clamp = 250 v l = 500 h 40 - - a (*) pulse duration = 300 s, duty cycle 1.5 %
bur52 comset semiconductors 3/3 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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